bs870 vishay semiconductors formerly general semiconductor document number 88182 www.vishay.com 10-may-02 1 dmos transistor (n-channel) maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v dss 60 v drain-gate voltage v dgs 60 v gate-source-voltage (pulsed) v gs 20 v drain current (continuous) i d 250 ma power dissipation at t sb = 50 cp tot 0.310 (1) w thermal resistance junction to substrate backside r sb 320 (1) c/w thermal resistance junction to ambient air r ja 450 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c note: (1) ceramic substrate 0.7mm; 2.5 cm 2 area features high input impedance high-speed switching no minority carrier storage time cmos logic compatible input no thermal runaway no secondary breakdown mechanical data case: sot-23 plastic package weight: approx. 0.008g packaging codes/options: e8/10k per 13 reel (8mm tape), 30k/box e9/3k per 7 reel (8mm tape), 30k/box .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) to-236ab (sot-23) dimensions in inches and (millimeters) 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) pin configuration 1. gate 2. source 3. drain mounting pad layout
bs870 vishay semiconductors formerly general semiconductor www.vishay.com document number 88182 2 10-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit drain-source breakdown voltage v (br)dss i d = 100 a, v gs = 0 60 80 v gate threshold voltage v gs(th) v gs = v ds , i d = 1m a 1.0 2.0 3.0 gate-body leakage current i gss v gs = 15v, v ds = 0v 10 na drain cutoff current i dss v ds = 25v, v gs = 0v 0.5 a drain-source on-state resistance r ds(on) v gs = 10v, i d = 200ma 3.5 5.0 ? forward transconductance g m v ds = 10v, i d = 200ma, 200 ms f = 1mhz input capacitance c iss v ds = 10v, v gs = 0 30 pf f = 1mhz turn-on time t on v gs = 10v, v ds = 10v 5 ns turn-off time t off r d = 100 ? 25 ns note: (1)device on fiberglass substrate, see layout inverse diode parameter symbol test condition value unit max. forward current (continuous) i f t amb = 25 c 0.3 a forward voltage drop (typ.) v f v gs = 0v, i f = 0.3a 0.85 v t j = 25 c 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) dimensions in inches and (millimeters) layout for r thja test thickness: fiberglass 0.059 in. (1.5 mm) copper leads 0.012 in. (0.3 mm)
bs870 vishay semiconductors formerly general semiconductor document number 88182 www.vishay.com 10-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted) ? ? ? ? bs870 bs870 bs870 bs870
bs870 vishay semiconductors formerly general semiconductor www.vishay.com document number 88182 4 10-may-02 ? ? ? ? bs870 bs870 bs870 bs870 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bs870 vishay semiconductors formerly general semiconductor document number 88182 www.vishay.com 10-may-02 5 ? ? bs870 bs870 bs870 bs870 ratings and characteristic curves (t a = 25 c unless otherwise noted)
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